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| 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 SST13LP012.4 GHz / 5 GHz Dual-Band Power Amplifier Preliminary Specifications FEATURES: * High Gain: - Typically 28 dB gain across 2.4-2.5 GHz over temperature 0C to +85C - Typically 30-33 dB gain across 4.9-5.8 GHz over temperature 0C to +85C * High linear output power: - >29 dBm P1dB across 2.4-2.5 GHz (Exceeding maximum rating of average output power, never measure with CW source! Pulsed single-tone source with <50% duty cycle is recommended.) - Meets 802.11g OFDM ACPR requirement up to 23 dBm - Added EVM~4% up to 21 dBm for 54 Mbps 802.11g signal - Meets 802.11b ACPR requirement up to 23 dBm - ~28 dBm P1dB (Pulsed single-tone signal) across 4.9~5.8 GHz - Meets 802.11a OFDM ACPR requirement up to 22 dBm over whole band - Added EVM~4% up to 20 dBm for 54 Mbps 802.11a signal * High power-added efficiency/Low operating current for both 802.11a/b/g applications - ~24%/250 mA @ POUT = 23 dBm for 802.11g - ~23%/260 mA @ POUT = 23 dBm for 802.11b - ~9.5%/320 mA @ POUT = 20 dBm for 802.11a * Built-in Ultra-low IREF power-up/down control - IREF <3 mA * Low idle current - ~70 mA ICQ (802.11b/g) - ~170 mA ICQ (802.11a) * High-speed power-up/down - Turn on/off time (10%~90%) <100 ns - Typical power-up/down delay with driver delay included <200 ns * High temperature stability - ~1 dB gain/power variation between 0C to +85C across 2.4~2.5 GHz - ~3.5/1.5 dB gain/max linear power variation between 0C to +85C across 4.9~5.8 GHz - ~1 dB detector variation over 0C to +85C * Low shut-down current (< 0.1 A) * On-chip power detection * 20 dB dynamic range on-chip power detection * Simple input/output matching * Packages available - 24-contact WQFN (4mm x 4mm) - Non-Pb (lead-free) packages available APPLICATIONS: * * * * * * WLAN (IEEE 802.11a/g/b) Japanese WLAN HyperLAN2 Multimedia Home RF Cordless phones PRODUCT DESCRIPTION The SST13LP01 is a high-gain, high-performance, dualband power amplifier IC based on the highly-reliable InGaP/GaAs HBT technology. The SST13LP01 device can be easily configured for highpower applications with superb power-added efficiency while operating over the 802.11a/b/g frequency band for U.S., European, and Japanese markets (2.4-2.5 GHz and 4.9-5.8 GHz. The SST13LP01 has excellent linearity, typically ~4% added EVM at 21 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dBm and 802.11b spectrum mask at 23 dBm. For 802.11a operation, the SST13LP01 has demonstrated typically ~4% added EVM at 20 dBm output power while meeting 802.11a spectrum mask at 22 dBm. The (c)2005 SST Communications Corp. S71287-00-000 11/05 1 SST13LP01 also has wide-range (>20 dB), temperaturestable (~1 dB over 85C), single-ended/differential power detectors which lower users' cost on power control. The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultra-low reference current (total IREF <3 mA) makes the SST13LP01 controllable by an on/off switching signal directly from the baseband chip. These features, coupled with low operating current, make the SST13LP01 ideal for the final stage power amplification in both batterypowered 802.11a/b/g WLAN transmitter and access point applications. The SST13LP01 is offered in a 24-contact WQFN package. See Figure 1 for pin assignments and Table 1 for pin descriptions. The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications FUNCTIONAL BLOCKS FUNCTIONAL BLOCK DIAGRAM VREF12_LB VCCb_LB VCC1_LB 24 RFIN_LB NC NC NC RFIN_HB VREF123_HB 1 2 3 4 5 6 23 22 21 20 19 18 17 16 15 14 RFOUT_LB GND GND RFOUT_HB RFOUT_HB Det_HB LB Bias Circuit Det_LB 13 12 NC 1287 B1.2 NC HB Bias Circuit 7 VCCb_HB 8 NC 9 VCC1_HB 10 VCC2_HB 11 VCC3_HB (c)2005 SST Communications Corp. NC S71287-00-000 11/05 2 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications PIN ASSIGNMENTS VREF12_LB VCCb_LB VCC1_LB 24 RFIN_LB NC NC NC RFIN_HB VREF123_HB 1 2 3 4 5 6 7 VCCb_HB 23 22 21 20 19 18 RFOUT_LB NC NC RFOUT_HB RFOUT_HB Det_HB Det_LB 17 16 15 14 13 12 NC 1287 P1.2 NC Top View (contacts facing down) RF and DC GND 0 8 NC 9 VCC1_HB 10 VCC2_HB 11 VCC3_HB FIGURE 1: PIN ASSIGNMENTS FOR 16-CONTACT WQFN (c)2005 SST Communications Corp. NC S71287-00-000 11/05 3 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications PIN DESCRIPTIONS TABLE 1: PIN DESCRIPTION Symbol GND RFIN_LB NC NC NC RFIN_HB VREF123_HB VCCb_HB NC VCC1_HB VCC2_HB VCC3_HB NC Det_HB RFOUT_HB RFOUT_HB NC NC RFOUT_LB Det_LB NC VCC1_LB VREF12_LB VCCb_LB NC Pin No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 No Connection No Connection Power Supply PWR PWR PWR No Connection No Connection O O No Connection Power Supply Power Supply Power Supply No Connection O O O PWR PWR PWR No Connection No Connection No Connection I PWR PWR Pin Name Ground I Type Function Ground pad RF input for Low Band, DC decoupled Unconnected pin Unconnected pin Unconnected pin RF input for High Band, DC decoupled 1st, 2nd, and 3rd stage current control for High Band Power Supply, Bias circuit for High Band Unconnected pin 1st stage Power supply for High Band 2nd stage Power supply for High Band 3rd stage Power supply for High Band Unconnected pin Detector Voltage Output for High Band RF output for High Band, DC decoupled RF output for High Band, DC decoupled Unconnected pin Unconnected pin RF output for Low Band, DC decoupled Detector Voltage Output for Low Band Unconnected pin 1st stage Power supply for Low Band Power Supply, Bias circuit for Low Band Current Control for Low Band Unconnected pin T1.1 1287 (c)2005 SST Communications Corp. S71287-00-000 11/05 4 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figures 2 through 28 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Supply Voltage at pins 7, 9, 10, 11, 21, and 23 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.0V Reference Voltage at pins 6 and 22 (VREF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds OPERATING RANGE Range Industrial Ambient Temp -40C to +85C VCC 3.3V (c)2005 SST Communications Corp. S71287-00-000 11/05 5 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications For 802.11b/g Operation TABLE 2: DC ELECTRICAL CHARACTERISTICS Symbol VCC ICC Supply Current for 802.11g, 23 dBm for 802.11b, 23 dBm ICQ IOFF VREG Idle current for 802.11g to meet EVM<4% @ 21 dBm Shut down current Reference Voltage at pin 22, with 105 resistor 2.75 2.85 250 260 70 0.1 2.95 mA mA mA A V T2.1 1287 Parameter Supply Voltage at pin 21 Min. 3.0 Typ 3.3 Max. 3.6 Unit V Test Conditions TABLE 3: AC ELECTRICAL CHARACTERISTICS FOR CONFIGURATION Symbol FL-U G GVAR1 GVAR2 ACPR Added EVM 2f, 3f, 4f, 5f Parameter Frequency range Small signal gain Gain variation over band (2400~2485 MHz) Gain ripple over channel (20 MHz) Meet 11b spectrum mask Meet 11g OFDM 54 MBPS spectrum mask POUT = 22 dBm output with 54 MBPS 11g OFDM signal Harmonics at 22 dBm, without trapping capacitors 22 22 0.2 23 23 4 -40 Min. 2400 27 28 Typ Max. 2485 29 0.5 Unit MHz dB dB dB dBm dBm % dBc T3.1 1287 (c)2005 SST Communications Corp. S71287-00-000 11/05 6 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications For 802.11a Operation TABLE 4: DC ELECTRICAL CHARACTERISTICS Symbol VCC ICC ICQ IOFF VREG Total IREG Supply Current for 802.11a, 21 dBm at VCC = 3.3V Idle current Shut down current Reference Voltage at pin 6, with 0 resistor Total Reference Current 2.8 300 170 <0.1 2.9 2 3.0 3 340 mA mA A V mA T4.1 1287 Parameter Supply Voltage at pins 7, 9, 10, 11 Min. 3.0 Typ 3.3 Max. 3.6 Unit V Test Conditions TABLE 5: AC ELECTRICAL CHARACTERISTICS FOR CONFIGURATION Symbol FL-U G GVAR Parameter Frequency range Linear gain across 4.9-5.9 GHz, 0C to +85C Gain variation over band (4.9-5.8 MHz) Gain variation over band (4.9-5.38 MHz) Gain variation over band (5.7-5.8 MHz) Gain variation over channel (20 MHz) Linearity Added EVM @ POUT = 20 dBm with 54 MBPS 11a OFDM signal when operating at 3.3V VCC Output power level with 802.11a mask compliance across 4.9-5.8 GHz 2f, 3f, 4f, 5f Harmonics at 22 dBm 21 Min. 4900 28 4 2 0.5 0.2 4 22 -40 Typ Max. 5800 34 Unit MHz dB dB dB dB dB % dBm dBc T5.1 1287 (c)2005 SST Communications Corp. S71287-00-000 11/05 7 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications S11 versus Frequency 0 0 -5 -10 -10 -20 S12 versus Frequency S11 (dB) S12 (dB) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 -15 -20 -25 -30 -35 -40 -45 -30 -40 -50 -60 -70 -80 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 Frequency (GHz) Frequency (GHz) S22 versus Frequency 0 -5 -10 -15 -20 -25 -30 0.0 1287 SParmLowB.0 S21 versus Frequency 40 30 20 S21 (dB) 10 0 -10 -20 -30 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 S22 (dB) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 Frequency (GHz) Frequency (GHz) FIGURE 2: LOW BAND S-PARAMETERS (c)2005 SST Communications Corp. S71287-00-000 11/05 8 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications TYPICAL PERFORMANCE CHARACTERISTICS FOR 802.11B/G TEST CONDITIONS: VCC = 3.3V, VREG_LB = 2.85V, TA = 25C, 54 MPBS 802.11G OFDM SIGNAL EVM versus Output Power 10 9 Freq = 2.412 G Hz 8 Freq = 2.442 G Hz 7 Freq = 2.484 G Hz EVM (%) 6 5 4 3 2 1 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) FIGURE 3: LOW BAND EVM VERSUS OUTPUT POWER 1287 F03.0 Supply Current versus Output Power 275 250 Freq = 2 .412 G Hz Freq = 2 .442 G Hz Freq = 2 .484 G Hz Supply Current (mA) 225 200 175 150 125 100 75 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) FIGURE 4: LOW BAND POWER SUPPLY CURRENT VERSUS OUTPUT POWER (c)2005 SST Communications Corp. 1287 F04.0 S71287-00-000 11/05 9 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications PAE versus Output Power 26 24 Freq = 2.412 G Hz 22 20 18 Freq = 2.442 G Hz Freq = 2.484 G Hz PAE (%) 16 14 12 10 8 6 4 2 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) FIGURE 5: LOW BAND PAE VERSUS OUTPUT POWER 1287 F05.0 10 Freq = 2.412 GHz 0 Freq = 2.442 GHz -10 Amplitude (dB) Freq = 2.484 GHz -20 -30 -40 -50 -60 -70 2.35 POUT = 23 dBm DC current = 250 mA 1287 F06.0 2.40 2.45 Frequency (GHz) 2.50 2.55 FIGURE 6: LOW BAND 802.11G SPECTRUM MASK AT 23 DBM WITH DC CURRENT AT 250 MA (c)2005 SST Communications Corp. S71287-00-000 11/05 10 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications TYPICAL PERFORMANCE CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, VREG_LB = 2.85V, TA = 25C, 1 MPBS 802.11B CCK SIGNAL 10 Freq = 2.412 GHz 0 -10 Freq = 2.442 GHz Freq = 2.484 GHz Amplitude (dB) -20 -30 -40 -50 -60 -70 -80 2.35 2.40 2.45 2.50 POUT = 23 dBm DC current 265 mA 2.55 Frequency (GHz) FIGURE 7: LOW BAND 802.11B SPECTRUM MASK AT 23 DBM WITH DC CURRENT OF 265 MA (c)2005 SST Communications Corp. S71287-00-000 1287 F07.0 11/05 11 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications LOW BAND POWER DETECTOR CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, VREG_LB = 2.85V, TA = 25C, 54 MPBS 802.11G OFDM SIGNAL Detector Voltage versus Output Power 1.50 1.40 Detector Voltage (V) 1.30 1.20 1.10 1.00 0.90 1287 F09.0 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 Freq = 2.412 GHz (0 C) Freq = 2.412 GHz (25 C) Freq =2.412 GHz (85 C) Freq = 2.412 GHz (Max) Freq = 2.412 GHz (Min) 18 20 22 24 26 Output Power (dBm) FIGURE 8: LOW BAND CH1 DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES Detector Voltage versus Output Power 1.50 1.40 Detector Voltage (V) 1.30 1.20 1.10 1.00 0.90 1287 F10.0 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 Freq = 2.442 GHz (0 C) Freq = 2.442 GHz (25 C) Freq = 2.442 GHz (85C) Freq = 2.442 GHz (Max) Freq = 2.442 GHz (Min) 18 20 22 24 26 Output Power (dBm) FIGURE 9: LOW BAND CH7 DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES (c)2005 SST Communications Corp. S71287-00-000 11/05 12 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications Detector Voltage versus Output Power 1.50 1.40 Detector Voltage (V) 1.30 1.20 1.10 1.00 0.90 1287 F11.0 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 Freq = 2.484 GHz (0 C) Freq = 2.484 GHz (25 C) Freq = 2.484 GHz (85 C) Freq = 2.484 GHz (Max) Freq = 2.484 GHz (Min) 18 20 22 24 26 Output Power (dBm) FIGURE 10: LOW BAND CH14 DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES Detector Voltage versus Output Power 1.50 1.40 Freq = 2.412 GHz (25 C) Freq = 2.442 GHz (25 C) Freq = 2.484 GHz (25 C) Freq = 2.412 GHz (0 C) Freq = 2.442 GHz (0 C) Freq = 2.484 GHz (0 C) Freq =2.412 GHz (85 C) Freq = 2.442 GHz (85C) Freq = 2.484 GHz (85 C) Freq = 2.412 GHz (Max) Freq = 2.412 GHz (Min) Freq = 2.442 GHz (Max) Freq = 2.442 GHz (Min) Freq = 2.484 GHz (Max) Freq = 2.484 GHz (Min) 1287 F12.0 Detector Voltage (V) 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Output Power (dBm) FIGURE 11: LOW BAND DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES (c)2005 SST Communications Corp. S71287-00-000 11/05 13 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications LOW BAND POWER DETECTOR CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, VREG_LB = 2.85V, TA = 25C, 1 MPBS 802.11G CCK SIGNAL Detector Voltage versus Output Power 1.50 1.40 Detector Voltage (V) 1.30 1.20 1.10 1.00 0.90 1287 F13.0 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 Freq = 2.412 GHz (0 C) Freq = 2.412 GHz (25 C) Freq =2.412 GHz (85 C) Freq = 2.412 GHz (Max) Freq = 2.412 GHz (Min) 18 20 22 24 26 Output Power (dBm) FIGURE 12: LOW BAND CH1 DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES Detector Voltage versus Output Power 1.50 1.40 Detector Voltage (V) 1.30 1.20 1.10 1.00 0.90 1287 F14.0 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 Freq = 2.442 GHz (0 C) Freq = 2.442 GHz (25 C) Freq = 2.442 GHz (85C) Freq = 2.442 GHz (Max) Freq = 2.442 GHz (Min) 18 20 22 24 26 Output Power (dBm) FIGURE 13: LOW BAND CH7 DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES (c)2005 SST Communications Corp. S71287-00-000 11/05 14 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications Detector Voltage versus Output Power 1.50 1.40 Detector Voltage (V) 1.30 1.20 1.10 1.00 0.90 1287 F15.0 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 Freq = 2.484 GHz (0 C) Freq = 2.484 GHz (25 C) Freq = 2.484 GHz (85 C) Freq = 2.484 GHz (Max) Freq = 2.484 GHz (Min) 18 20 22 24 26 Output Power (dBm) FIGURE 14: LOW BAND CH14 DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES Detector Voltage versus Output Power 1.50 1.40 Detector Voltage (V) 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0 2 Freq = 2.412 GHz (25 C) Freq = 2.442 GHz (25 C) Freq = 2.484 GHz (25 C) Freq = 2.412 GHz (0 C) Freq = 2.442 GHz (0 C) Freq = 2.484 GHz (0 C) Freq =2.412 GHz (85 C) Freq = 2.442 GHz (85C) Freq = 2.484 GHz (85 C) Freq = 2.412 GHz (Max) Freq = 2.412 GHz (Min) Freq = 2.442 GHz (Max) Freq = 2.442 GHz (Min) Freq = 2.484 GHz (Max) Freq = 2.484 GHz (Min) 1287 F16.0 4 6 8 10 12 14 16 18 20 22 24 26 Output Power (dBm) FIGURE 15: LOW BAND DETECTOR CHARACTERISTICS OVER TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES (c)2005 SST Communications Corp. S71287-00-000 11/05 15 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications S11 versus Frequency 0 -5 -10 -15 -20 -25 -70 -30 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 -80 0.0 1 .0 2.0 0 -10 -20 S12 versus Frequency S11 (dB) S12 (dB) -30 -40 -50 -60 Frequency (GHz) S21 versus Frequency 40 30 3.0 4.0 5.0 6.0 7 .0 8.0 9.0 10.0 Frequency (GHz) S22 versus Frequency 0 -5 20 S21 (dB) 10 0 -10 -20 -30 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 -10 S22 (dB) -15 1287 SParmHighB.0 -20 -25 -30 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 Frequency (GHz) Frequency (GHz) FIGURE 16: HIGH BAND S-PARAMETERS (c)2005 SST Communications Corp. S71287-00-000 11/05 16 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications TYPICAL PERFORMANCE CHARACTERISTICS FOR 802.11A TEST CONDITIONS: VCC = 3.3V, VREG_HB = 2.9V, TA = 25C, 54 MPBS 802.11A OFDM SIGNAL 10 9 8 7 6 5 Fre q = 4.92 GHz Fre q = 5.18 GHz Fre q = 5.32 GHz Fre q = 5.805 GHz EVM versus Output Power EVM (%) 4 3 1287 F17.0 2 1 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Output Power (dBm) FIGURE 17: HIGH BAND EVM VERSUS OUTPUT POWER 425 400 375 Freq = 4.92 GHz Freq = 5.18 GHz Freq = 5.32 GHz 350 325 300 275 250 Freq = 5. 805 GHz Supply Current versus Output Power Supply Current (mA) 200 175 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Output Power (dBm) FIGURE 18: HIGH BAND POWER SUPPLY CURRENT VERSUS OUTPUT POWER (c)2005 SST Communications Corp. S71287-00-000 11/05 17 1287 F18.0 225 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications PAE versus Output Power 14 12 10 Fre q = 4.92 GHz Fre q = 5.18 GHz Fre q = 5.32 GHz PAE (%) 8 6 4 2 0 9 10 Fre q = 5.805 GHz 11 12 13 14 15 16 17 18 19 20 21 22 23 Output Power (dBm) FIGURE 19: HIGH BAND PAE VERSUS OUTPUT POWER 10 0 -10 POUT = 22 dBm DC current = 385 mA Amplitude (dB) -20 -30 -40 -50 -60 -70 4.85 4.87 4.89 4.91 4.93 4.95 4.97 1287 F20.0 4.99 Frequency (GHz) FIGURE 20: HIGH BAND 802.11A SPECTRUM MASK AT 4.92 GHZ AT OUTPUT POWER 22 DBM WITH DC CURRENT AT 385 MA (c)2005 SST Communications Corp. S71287-00-000 1287 F19.0 11/05 18 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications 10 0 -10 POUT = 22 dBm DC current = 375 mA Amplitude (dB) -20 -30 -40 -50 -60 -70 5.11 5.13 5.15 5.17 5.19 5.21 5.23 5.25 1287 F21.0 Frequency (GHz) FIGURE 21: HIGH BAND 802.11A SPECTRUM MASK AT 5.18 GHZ AT OUTPUT POWER 22 DBM WITH DC CURRENT AT 375 MA 10 0 -10 POUT = 22 dBm DC current = 365 mA Amplitude (dB) -20 -30 -40 -50 -60 -70 5.25 5.27 5.29 5.31 5.33 5.35 5.37 5.39 1287 F22.0 Frequency (GHz) FIGURE 22: HIGH BAND 802.11A SPECTRUM MASK AT 5.32 GHZ AT OUTPUT POWER 22 DBM WITH DC CURRENT AT 365 MA (c)2005 SST Communications Corp. S71287-00-000 11/05 19 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications 10 0 -10 POUT = 22 dBm DC current = 395 mA Amplitude (dB) -20 -30 -40 -50 -60 -70 5.74 5.76 5.78 5.80 5.82 5.84 5.8 6 5.88 1287 F23.0 Frequency (GHz) FIGURE 23: HIGH BAND 802.11A SPECTRUM MASK AT 5.805 GHZ AT OUTPUT POWER 22 DBM WITH DC CURRENT AT 395 MA (c)2005 SST Communications Corp. S71287-00-000 11/05 20 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications HIGH BAND POWER DETECTOR CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, VREG_HB = 2.9V, TA = 25C, 54 MPBS 802.11A OFSM SIGNAL Detector Voltage versus Output Power 1.80 1.70 Detector Voltage (V) 1.60 1.50 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24 Freq = 4.92 GHz (0 C) Freq = 4.92 GHz (25 C) Freq = 4.92 GHz (85 C) 1287 F24.0 Output Power (dBm) FIGURE 24: HIGH BAND DETECTOR CHARACTERISTICS OVER TEMPERATURE AT 4.92 GHZ Detector Voltage versus Output Power 1.80 1.70 1.60 Detector Voltage (V) 1.50 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 18 20 22 Freq = 5.18 GHz (0 C) Freq = 5.18 GHz (25 C) Freq = 5.18 GHz (85C) 1287 F25.0 24 Output Power (dBm) FIGURE 25: HIGH BAND DETECTOR CHARACTERISTICS OVER TEMPERATURE AT 5.18 GHZ (c)2005 SST Communications Corp. S71287-00-000 11/05 21 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications Detector Voltage versus Output Power 1.80 1.70 1.60 Detector Voltage (V) 1.50 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24 Freq = 5.32 GHz (0 C) Freq = 5.32 GHz (25 C) Freq = 5.32 GHz (85 C) 1287 F26.0 Output Power (dBm) FIGURE 26: HIGH BAND DETECTOR CHARACTERISTICS OVER TEMPERATURE AT 5.32 GHZ Detector Voltage versus Output Power 1.80 1.70 1.60 Detector Voltage (V) 1.50 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24 Freq = 5.805 GHz (0 C) Freq = 5.805 GHz (25 C) Freq = 5.805 GHz (85 C) 1287 F27.0 S71287-00-000 Output Power (dBm) FIGURE 27: HIGH BAND DETECTOR CHARACTERISTICS OVER TEMPERATURE AT 5.805 GHZ (c)2005 SST Communications Corp. 11/05 22 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications Detector Voltage versus Output Power 1.80 1.70 1.60 Freq = 4.92 GHz (25 C) Freq = 5.18 GHz (25 C) Freq = 5.32 GHz (25 C) Freq = 5.805 GHz (25 C) Freq = 4.92 GHz (0 C) Freq = 5.18 GHz (0 C) Freq = 5.32 GHz (0 C) Freq = 5.805 GHz (0 C) Freq = 4.92 GHz (85 C) Freq = 5.18 GHz (85C) Freq = 5.32 GHz (85 C) Freq = 5.805 GHz (85 C) Detector Voltage (V) 1.50 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Power (dBm) FIGURE 28: HIGH BAND DETECTOR CHARACTERISTICS OVER TEMPERATURE AND OVER FREQUENCY (c)2005 SST Communications Corp. S71287-00-000 1287 F28.0 11/05 23 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications Vcc_LB C3 10uF R1 105 C4 0.1uF C5 0.1uF C7 0.1uF L1 12nH 50 / 85 mil Det_LB C6 10pF Vreg_LB C2 100pF 50 / 125 mil 24 1 23 22 21 20 19 18 17 16 15 14 80 x 60 mil C9 2.4pF RFin_LB C1 2pF LB Bias Circuit RFout_LB C8 47pF 2 3 4 50 50 RFout_HB RFin_HB Vreg_HB C18 100pF 5 6 HB Bias Circuit 13 9 10 11 12 C10 0.3pF 7 8 C14 100pF C16 0.1uF C15 0.1uF C13 0.1 uF C12 0.1uF C11 10 pF Det_HB Vcc_HB C17 10uF 1287 Schematic1.0 Operating Conditions: Vreg_LB = 2.85V, Vcc_LB = 3.3V, Vreg_HB = 2.9V, Vcc_HB = 3.3V FIGURE 29: TYPICAL APPLICATION (c)2005 SST Communications Corp. S71287-00-000 11/05 24 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications PRODUCT ORDERING INFORMATION SST13LP SSTxxLP 01 xx QD XX F X Environmental Attribute F1 = non-Pb contact (lead) finish Package Modifier D = 24 contact Package Type Q = WQFN Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 3 = 2.4 GHz / 5 GHz Dual-Band Product Line 1 = SST Communications 1. Environmental suffix "F" denotes non-Pb solder. SST non-Pb solder devices are "RoHS Compliant". Valid combinations for SST13LP01 SST13LP01-QDF SST13LP01 Evaluation Kits SST13LP01-QDF-K Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. (c)2005 SST Communications Corp. S71287-00-000 11/05 25 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications PACKAGING DIAGRAMS TOP VIEW Pin #1 SIDE VIEW 0.2 BOTTOM VIEW See notes 2 and 3 Pin #1 4.00 0.08 0.075 2.3 2.3 0.30 0.18 0.45 0.35 0.5 BSC 4.00 0.08 0.80 0.70 0.05 Max 1mm 24-wqfn-4x4-QD-1.2 Note: 1. Complies with JEDEC JEP95 MO-220J, variant WGGD-4 except external paddle dimensions. 2. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min). 24-CONTACT VERY-VERY-THIN-PROFILE QUAD FLAT NO-LEAD (WQFN) SST PACKAGE CODE: QD TABLE 6: REVISION HISTORY Revision 00 Description Date Nov 2005 * SST conversion of data sheet GP1301 (c)2005 SST Communications Corp. S71287-00-000 11/05 26 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 Preliminary Specifications CONTACT INFORMATION Marketing SST Communications Corp. 5340 Alla Road, Ste. 210 Los Angeles, CA 90066 Tel: 310-577-3600 Fax: 310-577-3605 Sales NORTH AMERICA Silicon Storage Technology, Inc. Les Crowder Technical Sales Support - North America Tel: 949-495-6437 Fax: 949-495-6364 E-mail: lcrowder@sst.com ASIA PACIFIC NORTH SST Macao H. H. Chang Senior Director, Sales Room N, 6th Floor, Macao Finance Center, No. 202A-246, Rua de Pequim, Macau Tel: (853) 706-022 Fax: (853) 706-023 E-mail: hchang@sst.com ASIA PACIFIC SOUTH SST Communications Co. Sunny Tzeng Sales Manager 4F-2, No. 24, Lane 123, Sec.6, Min Chuan E. Rd Taipei 114, Taiwan, R.O.C. Tel: +886-22795-6877 Ext. 163 Fax: +886-9792-1241 E-mail: stzeng@sst.com KOREA SST Korea Charlie Shin Country Manager Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong, Bundang-Gu, Sungnam, Kyunggi-Do Korea, 463-020 Tel: (82) 31-715-9138 Fax: (82) 31-715-9137 Email: cshin@sst.com EUROPE Silicon Storage Technology Ltd. Ralph Thomson Applications Manager Mark House 9-11 Queens Road Hersham KT12 5LU UK Tel: +44 (0) 1869 321 431 Cell: +44 (0) 7787 508 919 E-mail: rthomson@sst.com JAPAN SST Japan Jun Kamata Sales Director 9F Toshin-Tameike Bldg, 1-1-14 Akasaka, Minato-ku, Tokyo, Japan 107-0052 Tel: (81) 3-5575-5515 Fax: (81) 3-5575-5516 Email: jkamata@sst.com Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com (c)2005 SST Communications Corp. S71287-00-000 11/05 27 |
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